***************************************************
* diode model
.model DIODE d

***************************************************
* NMOS MOSFET model
*
.model NMOSFET	NMOS(Level=3 Gamma=0 Delta=0 Eta=0 Theta=0 Kappa=0 Vmax=0 Xj=0
+		Tox=100n Uo=600 Phi=.6 Rs=1.624m Kp=20.53u W=.03 L=5u Vto=2.831
+	        Rd=1.031m Rds=444.4K Cbd=32p Pb=.8 Mj=.5 Fc=.5 Cgso=55p
+		Cgdo=30p Rg=13.89 Is=194E-18 N=1 Tt=100n)
***************************************************
* PMOS MOSFET model
*
.model PMOSFET	PMOS(Level=3 Gamma=0 Delta=0 Eta=0 Theta=0 Kappa=0 Vmax=0 Xj=0
+		Tox=100n Uo=600 Phi=.6 Rs=1.624m Kp=20.53u W=.03 L=5u Vto=-2.831
+	        Rd=1.031m Rds=444.4K Cbd=32p Pb=.8 Mj=.5 Fc=.5 Cgso=55p
+		Cgdo=30p Rg=13.89 Is=194E-18 N=1 Tt=100n)
***************************************************
* NPN device model
.model Q2N3904	NPN(Is=6.734f Xti=3 Eg=1.11 Vaf=74.03 Bf=416.4 Ne=1.259
+		Ise=6.734f Ikf=66.78m Xtb=1.5 Br=.7371 Nc=2 Isc=0 Ikr=0 Rc=1
+		Cjc=3.638p Mjc=.3085 Vjc=.75 Fc=.5 Cje=4.493p Mje=.2593 Vje=.75
+		Tr=239.5n Tf=301.2p Itf=.4 Vtf=4 Xtf=2 Rb=10)
***************************************************
* PNP device model
.model Q2N3906	PNP(Is=1.41f Xti=3 Eg=1.11 Vaf=18.7 Bf=180.7 Ne=1.5 Ise=0
+		Ikf=80m Xtb=1.5 Br=4.977 Nc=2 Isc=0 Ikr=0 Rc=2.5 Cjc=9.728p
+		Mjc=.5776 Vjc=.75 Fc=.5 Cje=8.063p Mje=.3677 Vje=.75 Tr=33.42n
+		Tf=179.3p Itf=.4 Vtf=4 Xtf=6 Rb=10)
*
*-----------------------------------------------------------------------------